SUB60N04-15LT |
RFQ for SUB60N04-15LT |
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| Product | Manufacturers | Pack | D/C |
| SUB60N04-15LT | - | TO263 | 2002 |
The SUB60N04-15LT is a 40-V n-channel, 15-m logic level MOSFET in a 5-lead D2PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology.
Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET.
The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes.
Features |
| Temperature-Sense Diodes for Thermal ShutdownLogic-Level Low On-ResistanceAvalanche Rated175 Junction TemperatureLow Gate ChargeFast Turn-On Time5-Lead D2PAK>2000-V ESD Rated |
| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 40 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| VGS Clamp Current | IG | 50 | mA | |
| Continuous Drain Current (TJ = 175) | TC = 25 | ID | 60 | A |
| TC = 125 | 50 | |||
| Source-to-Cathode Voltage | VSC | 100 | V | |
| Source-to-Anode Voltage | VSA | 100 | ||
| Avalanche Current | IAR | 50 | A | |
| Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 125 | mJ |
| Maximum Power Dissipation | TC = 25 | PD | 110 | W |
| TA = 25 | 3.75 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 | ||
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| SUB15P01-52 | TO-263 | |
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| SUB50N04-07T | ||
| SUB50P05-13LT | ||
| SUB50P05-13TL | ||
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| SUB60N04-15LT | TO263 | |
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| SUB60N06-18 | ||
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